X-RAY SCATTERING FROM LIQUID ³HE-⁴HE MIXTURESSUEMITSU M; SAWADA Y.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 7; PP. 4593-4603; BIBL. 34 REF.Article

STRUCTURE FACTOR OF LIQUID ³HE-⁴HE MIXTURESUEMITSU M; SAWADA Y.1979; PHYS. LETTERS, A; NLD; DA. 1979; VOL. 71; NO 1; PP. 71-74; BIBL. 15 REF.Article

COLLISIONAL EXCITATION TRANSFER AND RADIATIVE DECAY OF NE 2P LEVELS IN CAPILLARY DISCHARGE.NAKATA R; SUEMITSU M; FUKUDA K et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 7; PP. 1199-1205; BIBL. 16 REF.Article

Saturated adsorption of PH₃ on Si(100):P and its application to digital control of phosphorus coverage on Si(100) surfaceTSUKIDATE, Y; SUEMITSU, M.Applied surface science. 1999, Vol 151, Num 1-2, pp 148-152, issn 0169-4332Article

Formation of high-quality octahedral and flattened diamond crystals on a-SiC/Si using inert-gas curtain combustion methodABE, T; SUEMITSU, M.Journal of crystal growth. 1998, Vol 183, Num 1-2, pp 183-189, issn 0022-0248Article

Charged point defects in GaAs crystals evaluated by nuclear-magnetic-resonance spin echoSUEMITSU, M; NAKAJO, N.Journal of applied physics. 1989, Vol 66, Num 7, pp 3178-3186, issn 0021-8979Article

Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopyENTA, Y; TAKEGAWA, Y; SUEMITSU, M et al.Applied surface science. 1996, Vol 100-01, pp 449-453, issn 0169-4332Conference Paper

Mechanism for homogenizing electrical properties of semi-insulating GaAs during ingot annealingSUEMITSU, M; TERADA, K; NISHIJIMA, M et al.Journal of applied physics. 1991, Vol 70, Num 5, pp 2594-2598, issn 0021-8979Article

Carbon concentration dependence of charged point-defect density in semi-insulating GaAs as observed by nuclear magnetic resonanceSUEMITSU, M; NISHIJIMA, M; MIYAMOTO, N et al.Applied physics letters. 1990, Vol 57, Num 4, pp 398-399, issn 0003-6951, 2 p.Article

Low temperature silicon surface cleaning by HF etching/ultraviolet ozone cleaning (HF/UVOC) method (I)―Optimization of the HF treatmentSUEMITSU, M; KANEKO, T; MIYAMOTO, N et al.Japanese journal of applied physics. 1989, Vol 28, Num 12, pp 2421-2424, issn 0021-4922, 1Article

Low temperature silicon surface cleaning by HF etching/ultraviolet ozone cleaning (HF/UVOC) method (II)―in situy UVOCKANEKO, T; SUEMITSU, M; MIYAMOTO, N et al.Japanese journal of applied physics. 1989, Vol 28, Num 12, pp 2425-2429, issn 0021-4922, 1Article

Epitaxial graphene on silicon substratesSUEMITSU, M; FUKIDOME, H.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 37, issn 0022-3727, 374012.1-374012.11Article

Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxyTSUKIDATE, Y; SUEMITSU, M.Applied surface science. 2001, Vol 175-76, pp 43-48, issn 0169-4332Conference Paper

Formation of 250-μm-diameter diamond crystals by combustion flame method : effects of preformation of molybdenum oxide on the substrateABE, T; SUEMITSU, M; MIYAMOTO, N et al.Journal of applied physics. 1993, Vol 73, Num 2, pp 971-976, issn 0021-8979Article

Photoemission studies and outgassing-rate measurements on aluminum-alloy surfaces lathed with various alcoholsSUEMITSU, M; SHIMOYAMADA, H; MATSUZAKI, N et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 1, pp 188-192, issn 0734-2101Article

Behavior of excess arsenic in undoped, semi-insulating GaAs during ingot annealingSUEMITSU, M; TERADA, K; NISHIJIMA, M et al.Japanese journal of applied physics. 1992, Vol 31, Num 12A, pp L1654-L1656, issn 0021-4922, 2Article

High quality silicon epitaxy at 500°C using silane gas-source molecular beam techniqueHIROSE, F; SUEMITSU, M; MIYAMOTO, N et al.Japanese journal of applied physics. 1989, Vol 28, Num 11, pp L2003-L2006, issn 0021-4922, part 2Article

Effects of refraction of X-rays in double-crystal topographyNIWANO, M; KANAI, A; SUEMITSU, M et al.Japanese journal of applied physics. 1988, Vol 27, Num 5, pp 849-854, issn 0021-4922, 1Article

Effects of hydrogen on the properties of Si-incorporated diamond-like carbon films prepared by pulsed laser depositionNAKAZAWA, H; OSOZAWA, R; OKUZAKI, T et al.Diamond and related materials. 2011, Vol 20, Num 4, pp 485-491, issn 0925-9635, 7 p.Article

Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposureNAKAZAWA, H; OSOZAWA, R; ENTA, Y et al.Diamond and related materials. 2010, Vol 19, Num 11, pp 1387-1392, issn 0925-9635, 6 p.Article

Detailed observation of the photoquenching effect of EL2 in semi-insulating GaAs by the piezoelectric photoacoustic measurementsFUKUYAMA, A; AKASHI, Y; SUEMITSU, M et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 255-259, issn 0022-0248Conference Paper

Transition from random to island growth mode during Si(100)-(2 × 1) dry oxidation and its description with autocatalytic reaction modelSUEMITSU, M; ENTA, Y; MIYANISHI, Y et al.Applied surface science. 2000, Vol 162-63, pp 293-298, issn 0169-4332Conference Paper

Effects of adsorption kinetics on the low-temperature growth-rate activation energy in Si gas-source molecular beam epitaxyNAKAZAWA, H; SUEMITSU, M; MIYAMOTO, N et al.Japanese journal of applied physics. 1997, Vol 36, Num 6A, pp L703-L704, issn 0021-4922, 2Article

Kinetics of dissociative adsorption of dichlorosilane on Si(100)2 × 1SAKAMOTO, H; TAKAKUWA, Y; HORI, T et al.Applied surface science. 1996, Vol 107, Num 1-4, pp 68-74, issn 0169-4332Conference Paper

Hydrogen desorption kinetics from the growing Si(100) surface during silane gas-source molecular beam epitaxyKIM, K.-J; SUEMITSU, M; MIYAMOTO, N et al.Applied physics letters. 1993, Vol 63, Num 24, pp 3358-3360, issn 0003-6951Article